DEVELOPMENT OF AN IMPROVED SOLID ELECTROLYTIC CAPACITOR.

Abstract

A study was made of foamed silicon carbide with a view to utilizing this material as the basis of a solid electrolytic capacitor. The capacitor dielectric consists of a surface film of silica produced by thermal oxidation at 1200C. The foam is electrically conducting and provides contact to one side of the dielectric; a manganese dioxide counter-electrode or a conducting electrolyte can make contact to the opposite face of the dielectric. An anodic forming step is necessary after oxidation in order to obtain low leakage currents at operating voltages. The effect of various oxidation parameters (time, temperature, pressure) upon electrical performance was assessed, and a number of electrolytes were examined in order to form the oxide. Anodic oxidation of single crystals of silicon carbide was also investigated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 25, 1961
Accession Number
AD0713480

Entities

People

  • Basil J. Nicholson

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitors
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Electrolytes
  • Electrolytic Capacitors
  • Materials
  • Oxidation
  • Photoelectrochemical Cells
  • Silicon
  • Silicon Carbide
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Microwave Engineering.
  • Surface Engineering/Surface Coating Technology.