WIDE-BAND HOT-CARRIER DIODE GATE WITH APPLICATION TO ELECTRON-HOLE PLASMAS,
Abstract
A sampling or tone-burst gating system using hot-carrier diodes has been designed and shown to have the following characteristics: band width, dc to 1GHz; rise and fall times, typically = or < 3nsec and 5nsec; power capacility, about 100mW; gating pulse frquency, 10Hz to 1MHz; gating pulse width, 50nsec to 5msec; leakage, >45db down at 100kHz and about 24 db down at 500MHz; gate isolation from common ground reference, >60db at all frequencies; input and output impedances, adjustable to match source and load. As this gating system consists of two identical gates in parallel, it presents a constant impedance to prevent undesirable loading perturbations of the rf source. The gate can be synchronized with an rf signal whose frequency is = or < 1GHz and with the described design changes, may be synchronized with about 10GHz signal. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1970
- Accession Number
- AD0713602
Entities
People
- B. Ancker-johnson
- H. J. Fossum
- R. M. Lantz
- W. P. Robbins
Organizations
- Boeing