ULTRA HIGH SPEED GERMANIUM MESA SWITCHING TRANSISTOR.

Abstract

The purpose of the present work is to develop a saturated switching transistor suitable for switching rates as high as 125 Mc.

Document Details

Document Type
Technical Report
Publication Date
Oct 18, 1962
Accession Number
AD0713607

Entities

People

  • Doyle S. Granberry
  • E. C. Wurst
  • R. L. Petritz

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Cooperation
  • Electronics
  • Germanium
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics
  • Switching
  • Transistors

Fields of Study

  • Physics