CRYSTAL PROPERTIES AS INFLUENCED BY CRYSTALLOGRAPHIC IMPERFECTIONS: HIGH-ENERGY ION IMPLANTATION,
Abstract
High-energy ion implantation and its use for the formation of insulating films is evaluated. Subsurface silicon nitride, silicon carbide, and silicon oxide films are produced approximately 2 micrometers below the silicon surface. The perfection of the silicon crystal above and below the insulating film is maintained. The films are homogeneous, self-supporting, and 5000A thick for moderate-beam currents. Thermal spiking, leading to nonuniform films, is observed for high-beam currents (20 microamps) and short-time implantations. Spiking can be avoided at low-beam currents. High-resistivity surface layers on silicon are produced through proton implantation. For 1MeV protons and a dose larger than 10 to the 15th power H(+)/sq cm, the high-resistivity layer is 16 micrometers thick. For 3MeV this layer is about 90 micrometers. The crystallographic perfection of the silicon in this surface layer is maintained. For long-time anneal cycles up to 300C the high resistivity layer is stable. Short-time anneal cycles at 400C change the resistance of the layer only slightly. At higher anneal temperatures the radiation damage starts to anneal out rapidly, and at 800C the crystal returns to its original resistivity. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1970
- Accession Number
- AD0713671
Entities
People
- Guenter H. Schwuttke
Organizations
- International Business Machines Corporation (Armonk, NY)