On the Dislocation Mobility in Germanium at High Stresses and Low Temperatures.

Abstract

The motion of dislocations in germanium at 300K was studied at very high stresses. No evidence was found for any dislocation motion at stresses up to tau/G = 0.017. Both grown-in and freshly introduced dislocations were studied using etch pitting techniques. The results are shown to be consistent with the thermally activated kink model and to be in disagreement with the predictions of the kink tunneling model proposed by Gilman. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1970
Accession Number
AD0714267

Entities

People

  • Howard K. Birnbaum
  • Robert P. Walson

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Dislocations
  • Germanium
  • Low Temperature
  • Mobility
  • Quantum Tunneling
  • Tunneling

Readers

  • Materials Science and Engineering.