Study and Development of Luminescence and Laser Operation in Various III-V and II-VI Semiconductors.

Abstract

Carrier recombination and laser processes in semiconductors, mainly GaAs, are described. Measurements on GaAs over a wide doping range are reported. The electron-hole-lattice interaction and its 16meV reduction of the laser photon energy in GaAs is ascribed in large part to electron-electron interaction. Laser operation of p-n junctions in GaAs doped with amphoteric impurities is demonstrated. Optical pumping with a Ga(AsP) laser diode has been used to excite photoluminescence and laser operation of n+/n/n+ layered structures, and to perform spectroscopic studies on Gunn oscillator wafers. A method is described for coupling laser beams into thin structures (about one micrometer) and for easy coupling of optical signals between various thin structures. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1970
Accession Number
AD0714533

Entities

People

  • Nick Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Couplings
  • Electron Electron Interactions
  • Electron Holes
  • Electrons
  • Extrinsic Semiconductors
  • Laser Beams
  • Laser Diodes
  • Lasers
  • Luminescence
  • Measurement
  • Optical Pumping
  • P-N Junctions
  • Photoluminescence
  • Semiconductors

Fields of Study

  • Materials science
  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics