Effect of Irradiation with a High-Power Electron Beam on the Structure and Microhardness of a Silicon Single Crystal,
Abstract
Irradiation of (110) plane of an n-Si single crystal with an electron beam of about 10 (superscript 7) W/cm (superscript 2) resulted in 3 types of deformation. The dislocation d. (Rho) in the 2nd and 3rd regions was about 10 (superscript 7) and is greater than 10, superscript 8/cm (superscript 2). The single-crystal state did not change in any of the 3 regions. The microhardness H (subscript v) changed sharply on annealing at 300 degrees. Annealing at 600 degrees removed all strain, but H (subscript v) did not increase above 1000 kg/mm (superscript 2). The increase of Rho of different specimens is assocd. with the decrease in H (subscript v). (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 27, 1970
- Accession Number
- AD0714742
Entities
People
- I. V. Gridneva
- O. V. Gusev
- V. I. Trefilov
- V. P. Alekhin
- Yu. V. Milman
Organizations
- National Air and Space Intelligence Center