The Mechanism of Growth of Whiskers from the Gas Phase,
Abstract
The mechanism responsible for the growth of Si, Ge, and other types of whiskers from the gas phase is discussed in the light of the latest theoretical and experimental evidence. The crystallization process is treated as being due to a mechanism in which vortices carry particles of crystallizing material along as a result of the pressure difference between the outside and inside of the vortex system. Formulae for determining the rate of growth of such whiskers are derived, allowance being made for the surface diffusion of adsorbed atoms along the sides of the growing whiskers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 17, 1970
- Accession Number
- AD0714799
Entities
People
- E. V. Borisov
- I. P. Taskaev
Organizations
- National Air and Space Intelligence Center