A Radiation Effects Research Program.
Abstract
The report includes radiation effects on GaAsP and GaP schottky barrier diodes; Fabrication and electrical testing of Zn-Si and Zn-GaAsP schottky barrier diodes; The effects of neutron and gamma irradiation on diffused GaAs laser diodes; Radiation damage to epitaxial silicon measured by micro-Hall devices; Hall effect in dielectric materials; Conductance measurements on metal-insulator-semiconductor capacitors; Metal-insulator-semiconductor (MIS) capacitor studies; Transistor modeling; Transient radiation effects in silicon controlled rectifiers; Theory of avalanche breakdown in silicon II; Particle transport and band structure within imperfect crystal; Transport equations with variable coefficients. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1970
- Accession Number
- AD0715140
Entities
People
- H. D. Southward
- L. T. Boatwright
- R. C. Allen Jr.
- W. J. Byatt
- Wayne W. Grannemann
Organizations
- University of New Mexico