Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors,

Abstract

GaAs Schottky-barrier field-effect transistors were realized in the 1 micron structure with an f(max) up to 30 GHz (2.5 times higher than f(max) reported for other transistors). Details of measurements performed are reported and technological improvements obtained or still desired are discussed. For Si Schottky-barrier field-effect transistors, platinum and palladium as gate materials have shown improved breakdown behavior. Exploratory work has been started with devices with reduced carrier concentration at the Si-SiO2 interface to increase Schottky gate breakdown. The process of Si epitaxy has been adjusted to very low deposition rates (150 A/min) to enable controlled channel formation between 500 and 1000 A thickness. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 16, 1970
Accession Number
AD0715282

Entities

People

  • Karsten E. Drangeid

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Field Effect Transistors
  • Materials
  • Measurement
  • Palladium
  • Platinum
  • Thickness
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology