Study of Process for Forming Heterojunctions by Gold-Solvent Alloying.
Abstract
In the investigation of the gold-solvent alloying technique for the fabrication of heterojunctions, the criteria for obtaining good-quality Ge-GaAs heterojunctions with planar interfaces and single-crystal regrowths were determined. The alloying mixture of gold and germanium must be of homogeneous composition. The time rate of temperature rise during melting and of temperature fall during crystal growth must be very low. In addition, the temperature gradient across the solid-liquid interface must be carefully controlled during both the melting and crystal-growing periods. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 08, 1970
- Accession Number
- AD0715307
Entities
People
- Yuan-feng Chang
Organizations
- Battelle Memorial Institute