Indium Arsenide-Phosphide Injection Lasers

Abstract

The indium arsenide-phosphide alloy system has been studied. Indium arsenide and indium phosphide compounds were prepared by pulling and directional freezing respectively. The InP ingots were characterized for distribution coefficients and electrical properties. Ingots of InAs(1-x)P(x) were pulled by two modifications of the Czochralski technique--an all-quartz sealed system and pulling through a liquid encapsulant. The two methods are compared and the latter found to be superior for these alloys. Electrical, X-ray and mass spectrometric measurements were made on the alloy ingots. Laser diodes were fabricated in a similar manner to those reported on previously, with power outputs up to 0.5W at 1.06 micrometer with better than 1% efficiency being obtained under pulsed conditions close to 100K. Amplification of the 1.06 micrometer emission from an InAs(1-x)P(x) laser diode was demonstrated in a Nd- doped glass fiber, showing a system gain of 50,000. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1970
Accession Number
AD0715454

Entities

People

  • Alan G. Thompson
  • Bernd Ross

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Coefficients
  • Compound Semiconductors
  • Electrical Properties
  • Electronics Laboratories
  • Glass Fibers
  • Laser Beams
  • Laser Diodes
  • Lasers
  • Light (Electromagnetic Radiation)
  • Light Sources
  • Materials
  • Measurement
  • Modules (Electronics)
  • Phase Diagrams
  • Semiconductors
  • X Rays

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy