Hot Carrier Mobility Effects in Magneto-Schottky-Junctions.
Abstract
The report describes a theoretical investigation of the influence of hot carrier mobilities on magnetoelectric effects in forward-biased Schottky junctions. Average energies of carriers injected over the barrier have been calculated from simple band theory for the first time and are used to plot the dependence of the average injected mobilities on forward voltage and barrier heights. The results indicate that hot electron mobility effects make a significant contribution to magnetoelectric effects and must be taken into consideration for a comprehensive theory of such phenomena. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1970
- Accession Number
- AD0715706
Entities
People
- D. Yarbrough
- E. Ahlstrom
- H. Mette
Organizations
- United States Army Communications-Electronics Command