Damage and Recovery in Electron Irradiated Silicon Heavily Doped with Phosphorus.
Abstract
The damaging effects of radiation on solid state devices are ultimately traceable to radiation-induced changes in material properties vital to the performance characteristics of the device. The identification of defect structures, and an understanding of how they are introduced, altered and removed, and an understanding of the changes in physical properties caused by these defects are important in assessing the effects produced in devices and in evolving corrective measures. The work reported here deals with the introduction and recovery of damage produced in 0.1 ohm-cm P-doped float-zone silicon irradiated at room temperature with 1.0-MeV electrons. Possible explanations are considered for the reduction of the damage introduction rate with repeated electron irradiations and the annealing behavior is compared to that observed in more lightly doped material. The authors suggest that the decrease in introduction rate may be due to recombinations of mobile vacancies with trapped interstitials and/or to recombinations of mobile interstitials with vacancies at defect structures. Isothermal annealing experiments were performed to determine the kinetics of the recovery processes. The recovery kinetics were not resolved, but the recovery processes in silicon heavily doped with phosphorus appear to be more complicated with those involved in more lightly doped material. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 03, 1970
- Accession Number
- AD0715888
Entities
People
- C. P. Carnes
- H. M. Deangelis
- P. J. Drevinsky
- R. E. Penczer
Organizations
- Air Force Cambridge Research Laboratories