Investigations as to the Noise Characteristics of GaAs Avalanche Transit Time Diode Oscillators.
Abstract
Gallium arsenide p-n junction avalanche transit time oscillators were characterized with respect to noise performance. The results of these measurements were compared to other p-n junction oscillators, Read diodes, and Gunn diodes. Measurements include: receiver noise, using these devices as local oscillators for both balanced and single-ended mixer configurations; AM noise sideband-to-carrier ratios; FM noise sideband-to-carrier ratios, and AM and FM noise sideband-to-carrier ratios with cavity locking; thermal noise as a function of reverse bias current and amplifier noise figure. In general, the GaAs devices were superior in all respects to the Si- p-n and Si-Read structures. It also exhibited better FM noise than the Gunn oscillator and only slightly worse AM noise. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1970
- Accession Number
- AD0716990
Entities
People
- Joseph J. Baranowski
- Vincent J. Higgins
Organizations
- United States Army Communications-Electronics Command