Quenching of Naphthalene Luminescence by Oxygen and Nitric Oxide.
Abstract
The quenching of naphthalene-h8 and naphthalene-d8 luminescence by O2 and NO in the absence of molecular diffusion was investigated. By measurement of the dependence of fluorescence and phosphorescence yields and lifetimes on quencher concentration, it was possible to separate the effects of singlet and triplet electronic state quenching and to determine the critical quenching radii R(o). No static quenching of naphthalene fluorescence was observed for O2 concentrations of up to 0.25 M. Conversely, the concentration dependence of naphthalene-h8 and naphthalene-d8 triplet state quenching by O2 is in excellent agreement with the Perrin formula. The rate constant for naphthalene triplet state quenching by O2 decreases upon the deuteration of naphthalene. The concentration dependence of naphthalene-h8 and naphthalene-d8 fluorescence quenching by NO is in excellent agreement with the Perrin formula. Possible causes for the greater efficiency of fluorescence quenching by NO than by O2 are discussed. The value of R(o) for naphthalene triplet state static quenching by NO cannot be determined with certainty because of the possibility that the excited singlet state is quenched directly to the ground state. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 28, 1970
- Accession Number
- AD0717155
Entities
People
- Peter F. Jones
- Seymour Siegel
Organizations
- The Aerospace Corporation