Crystal Properties as Influenced by Crystallographic Imperfections.
Abstract
The principal objective was to study the defect properties of semiconductor materials as a function of impurity concentration and ionizing radiation. Of specific interest were micro-defects in silicon after ion implantation. The report summarizes the major results of the contract work and supplies a complete list of scientific reports, presentations and publications generated by this study. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1970
- Accession Number
- AD0717773
Entities
People
- Guenter H. Schwuttke
Organizations
- International Business Machines Corporation (Armonk, NY)