New Methods for Growth and Characterization of GaAs and Mixed 3-5 Semiconductor Crystals

Abstract

A new technique for growing bulk gallium arsenide crystals has been invented and is being developed. Potentially this will enable production of III-V semiconductor crystals of higher quality than presently available. A new technique has been developed for drying encapsulating glasses, such as B2O3, for use in crystal growth. An improved polishing technique has been developed using sodium hypochlorite on a special polishing pad and a technique for producing reliable metal contacts on GaAs has been developed. An improved method has been developed for interpreting data on photoemission from Schottky barriers and gallium arsenide field effect transistors have been produced by liquid epitaxial growth techniques.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1971
Accession Number
AD0718138

Entities

People

  • William R. Wilcox

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystals
  • Electron Density
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Field Effect Transistors
  • Heat Energy
  • Materials
  • Measurement
  • P-N Junctions
  • Semiconductor Devices
  • Semiconductors
  • Thin Films
  • Transition Temperature
  • Transitions

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Optical Physics and Photonics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics