Growing Epitaxial Germanium Layers from a Melt,
Abstract
An apparatus for the growth of epitaxial Ge films from the melt is described. A Ge plate is immersed for a few sec. in a supercooled Ge melt and withdrawn; depending on the degree of supercooling, the thickness of the epitaxial layer ranges from 10 to 100 mu. The immersion and withdrawal of the plate must be rapid as possible; temperature control is critical, and it should be within plus or minus 0.1 degrees. The growth may be carried out either in vacuo or in H; epitaxial Ge layers grown in H atm. had a resistivity of 2 ohm-cm and a Hall mobility (of e) of 3000 cm(superscript2)/(V-sec). The method may also be used for the growth of InSb and GaSb epitaxial layers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 17, 1970
- Accession Number
- AD0718695
Entities
People
- S. A. Stroitelev
- Yu. B. Bolkhovityanov
Organizations
- National Air and Space Intelligence Center