Band Structure and Electrical Properties of Amorphous Semiconductors
Abstract
The rf sputtering is complete and high-quality films are being prepared by integrated circuit photolithographic techniques. The films have proven very strain sensitive and somewhat sensitive to variations in composition. The effective charge of the ions in the amorphous state has been determined from previous NMR results. More detailed NMR experiments and EPR experiments are being planned, in order to test the recent theoretical models. Amorphous and crystalline Si2Te3 films have been deposited in preparation for a comparison of their electrical and optical properties. Thermal effects at low temperatures and the radial temperature distribution of a threshold switch in the ON state are being investigated. A review of recent work in the field is nearing completion, and a review of the possible switching mechanisms has been completed. The basic ban model for amorphous semiconductors has been generalized to include electron-electron and electron-phonon interactions. Accurate solutions of the thermal model for switching have been obtained and an explanation for optical switching has been proposed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1970
- Accession Number
- AD0718793
Entities
People
- David Adler
Organizations
- Massachusetts Institute of Technology