Research on Amorphous Materials

Abstract

The report describes the first six months' efforts to study the relationships among structure, bonding, electronic structure and transport properties of amorphous semiconductors. It deals, first with structural studies of Ge-Te alloys, doped as As2Se3 and group 4 elements. The second portion of the report describes optical and photoemission studies of some of these materials, and the third section deals with transport properties of more complex systems.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1970
Accession Number
AD0719419

Entities

People

  • A. Bienenstock
  • R. H. Bube
  • William E. Spicer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amorphous Materials
  • Band Gaps
  • Covalent Bonds
  • Crystal Structure
  • Crystals
  • Diffraction
  • Distribution Functions
  • Energy Bands
  • Fermi Levels
  • Materials
  • Measurement
  • Neutron Diffraction
  • Phase Separation
  • Scattering
  • Spectra
  • Valence Bands
  • X-Ray Diffraction

Readers

  • Library and Information Science
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene