Development of GaAs Infrared Window Material
Abstract
The choice of a window material suitable for high power CO2 lasers emitting at 10.6 microns is discussed. Gallium arsenide was chosen as the primary candidate with gallium antimonide being the object of a subsidiary investigation. The preparation of GaAs is discussed at length. The physical, electrical and optical properties of GaAs are also discussed with particular reference to the high-resistivity form which is necessary to reduce free-carrier absorption at 10.6 microns to an acceptable level. The method used to measure the optical absorption coefficient is a calorimetric one making use of a low power CO2 laser. The variation of the optical absorption coefficient with impurities, different dopants and resistivity was examined.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1970
- Accession Number
- AD0720390
Entities
People
- Alan G. Thompson