Radiation Effects in Especially Pure Silicon,
Abstract
Silicon single crystals were obtained by means of non-crucible zone melting of very pure initial polycrystalline material. In such specimens the lifetime of minority carriers is up to 1000 microsec. It is found that variations in current carrier concentration occur differently for the different specimens. In the initial instant at low doses, the most effective yield is obtained by the oxygen complex levels, related to residual oxygen. In this case a decrease in hole concentration takes place. As the deep acceptor levels are accumulated and oxygen is depleted, a gradual increase in hole concentration takes place. Measurement of the temperature dependence of carrier concentration for pure specimens indicated the appearance of deep levels in the forbidden zone as a result of gamma-radiation. In standard specimens no defect levels are observed in this temperature range. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 11, 1970
- Accession Number
- AD0720753
Entities
People
- A. N. Suvorov
- A. S. Lyutovich
- S. V. Starodubtsev
- V. A. Sinyukov
- V. M. Mikhaelyan
Organizations
- National Air and Space Intelligence Center