Structure, Properties and Radiation Sensitivity of Electrically Bistable Materials
Abstract
A range of semiconductors of compositions Ge(x)Se(1-x) and Ge(x)Te(1- x) have been prepared and have been examined by x-ray diffraction to verify the composition limits of the glass forming regions reported by previous workers. Thin films have been prepared by flash evaporation of crushed bulk compounds and have been subjected to rdf analysis and electron microscopy, and several structural models are compared. Studies on the crystallization kinetics of the glasses are being carried out with particular reference to material composition. An interpretation of these initial experiments is given in terms of a possible structural model for the glasses. The importance of crystallite size on fast neutron damage threshold in heterogeneous amorphous semiconductors is emphasized and the results of radiation experiments on vanadate glasses are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 06, 1971
- Accession Number
- AD0720754
Entities
People
- Derek B. Dove
- Larry L. Hench
- Robert W. Gould
- Ronald E. Loehman
Organizations
- University of Florida