The Synthesis of Epitaxial Gallium Arsenide Layers,
Abstract
A GaAs substrate was coated with a thin layer of Ga, sealed in an ampul containing a few pieces of GaAs and the ampul was placed in a 2-zone furnace with a small temperature gradient at less than 1000 degrees. An equilibrium vapor pressure of As was established within the ampul, and as a result an epitaxial layer of GaAs grew from the Ga layer; the thickness of the epitaxial layer reached approximately 40 mu after 20-30 minutes, and decreased with increasing initial thickness of the Ga layer. The GaAs film had a single-crystal structure without stacking faults. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1971
- Accession Number
- AD0720931
Entities
People
- K. I. Avdienko
- S. A. Stroitelev
Organizations
- National Air and Space Intelligence Center