The Wafer and Diffusion Lot Dependence of Surface Effects Resulting from Ionizing Radiation,

Abstract

An investigation of the wafer and diffusion lot dependence of surface effects resulting from ionizing radiation was conducted by irradiating samples of transistors. The transistors were selected by the wafer and diffusion lot from which they were produced. Both NPN and PNP transistors were irradiated. In the NPN transistors, which sustained large amounts of surface damage, there was statistically significant dependence of the surface damage on the diffusion lot. With the PNP's which were not effected to the same extent as the NPN's the dependence on the wafer or diffusion lot was not observed to be significant. No 'mavericks' were noted in the experiment and further work is needed to determine the wafer or diffusion lot dependence of mavericks. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1970
Accession Number
AD0721096

Entities

People

  • David J. Albert

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Bipolar Junction Transistors
  • Diffusion
  • Electronic Components
  • Electronic Equipment
  • Ionizing Radiation
  • Npn Transistors
  • Pnp Transistors
  • Radiation
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.