A Survey of Second Breakdown Phenomena, Mechanisms, and Damage in Semiconductor Junction Devices.
Abstract
The report describes the phenomena associated with second breakdown. To explain these, a variety of thermal and electrical theories have been offered. None of these have earned general acceptance, although each can explain certain aspects of second breakdown. The theoretical basis of the second breakdown problem is discussed and representative theoretical treatments are presented. A new model of second breakdown, based on tunnel emission in an avalanching junction, is offered. The details of this model, however, remain to be worked out. The motivation for this work is to arrive at some conclusions on how to predict the second breakdown behavior of transistors in terms of geometry and circuital environment and, if possible, to suggest ways of improving transistor device and circuit design for better second breakdown resistance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 10, 1970
- Accession Number
- AD0721294
Entities
People
- Paul P. Budenstein
Organizations
- United States Army Aviation and Missile Command