Epitaxial Vapor Growth of Hg(1-x)Cd(x)Te in an Open Tube Apparatus.
Abstract
The report describes initial experiments made to evaluate optical density measurements as a means of monitoring, and later controlling, concentrations in vapor mixtures. First, closed optical cells containing single vapors were employed. The relationships between charge temperatures, resultant vapor pressures and measured optical densities of the vapors were established. These relationships were then studied under conditions prevailing in an open or free flowing system. This latter is currently used to grow epitaxy films of Hg(x)Cd(1-x)Te. Uniform crystal growth was obtained by means of a balanced-radiation technique for producing a flat temperature profile on the substrate during crystal growth. Precision lattice parameter measurements were used to obtain the value of X percent mole fraction of CdTe in each growth. Both short and long wavelength materials were grown and evaluated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1971
- Accession Number
- AD0721390
Entities
People
- Arthur T. Halpin
- Donald R. Carpenter
- Paul B. Pickar
Organizations
- International Business Machines Corporation (Armonk, NY)