Recombination Luminescence in Irradiated Silicon: Effects of Thermal Annealing and Lithium Impurity.
Abstract
Silicon crystals which have been irradiated with high-energy electrons at room temperature show two strong luminescence bands in the near infrared, when observed at low temperature. Both bands have a sharp zero-phonon peak followed by a series of broad phonon-assisted peaks. The effects of isochronal annealing and lithium impurity on the luminescence bands has been determined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1971
- Accession Number
- AD0721522
Entities
People
- Eric Shanks Johnson
Organizations
- University of Illinois Urbana–Champaign