Study of the Phenomena Known as Rapid Anneal in Transistors.
Abstract
Transient and steady state measurements are made on junction field effect transistors. A theory for the static characteristics of JFET's is developed based on a single defect energy level. The theory takes into account both the behavior of the space-charge region and compensation in the neutral channel due to neutron-induced defects. Transient measurements of JFET properties are made following exposure to a pulse of neutrons. Transient annealing of the drain to source resistance is observed in both n and p-channel JFET's. Annealing factors of about 0.0015 sec after irradiation are typical. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1971
- Accession Number
- AD0721743
Entities
People
- S. Naik
- W. G. Oldham
Organizations
- University of California, Berkeley