Spectral Response Investigation of Silicon Photovoltaic Cells.
Abstract
Results of an experimental analysis are presented which encompass measurments of the absolute value of the spectral response of silicon photovoltaic cells over a wide range of incident monochromatic radiation intensity. The cells, a diffused-junction, single-crystal type, contained a dense contact grid pattern. This design provided high power density output at high intensity radiation levels. Three experimental approaches were used ranging in incident photon current from 0.1 micro Angstrom/sq cm to 1 Angstrom/sq. cm. For the low-intensity radiation levels, the beam from a prism-monochromator illuminated the silicon cell. At medium radiation levels, a tungsten-iodine standard lamp was combined with twenty-nine narrow-band interference filters to provide quasi-monochromatic radiation. At high radiation levels, a pulsed xenon discharge lamp was used with the same set of interference filters. A broadband, thermocouple radiation detector provided for the simultaneous measurement of the incident radiation and the silicon-cell output current. Measurement of effective carrier lifetime served as a means for explaining differences in the spectral response behavior between the P+/N and N+/P cell types. Results from experiments with high-intensity chromatic light sources are also reported which indicate the high output power potential of the silicon cell. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1971
- Accession Number
- AD0721888
Entities
People
- Emil Kittl
Organizations
- United States Army Communications-Electronics Command