A Statistical Theory of Avalanche Breakdown in Silicon.
Abstract
A statistical theory of avalanche breakdown in silicon is presented, based on the conventional Boltzmann transport equation. The scattering mechanisms considered are impact ionization (electron-hole pair production), phonon emission and absorption, thermal generation and recombination. The resultant critical field is found to depend on the recombination statistics, which were ignored in previous theories of avalanche breakdown. The theoretical temperature dependence is compared with the temperature dependence of the breakdown voltages of three commercial diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1971
- Accession Number
- AD0722369
Entities
People
- T. V. Sewards
- Wayne W. Grannemann
Organizations
- University of New Mexico