A Center of Competence in Solid State Materials and Devices
Abstract
;Contents: Physical origins of burst noise in transistors; Noise in phototransistors and photodiodes; Impurity concentration dependent density of states at the Fermi level; Recombination and trapping of the photo-excited carriers in gold-doped silicon; Unified modeling of field-effect devices; Simultaneous automated ac and dc design of linear semiconductor integrated circuit amplifiers; The effect of crystallization on the strength of Li2O-SiO2 glass-ceramics; The early stages of crystallization in a Li2O-SiO2 glass; Electrical properties of glass; Solid solution decomposition of aluminum-rich aluminum-zinc-silver alloys; Metal tip holder for field-ion microscope.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 10, 1970
- Accession Number
- AD0722474
Entities
People
- Arthur J. Brodersen
- Eugene R. Chenette
- Fred A. Lindholm
- Robert W. Gould
- Stephen W. Director
Organizations
- University of Florida