Microwave Investigation of Semiconducting Material,
Abstract
After a survey of microwave solid state power sources, the work discusses the determination of velocity field characteristics of GaAs. The measurement method used by the author involves interaction of high power microwaves with a semiconductor sample. In this way the mean conductivity during the pulse is measured corresponding to a time averaged value of the electron velocity. A bridge circuit was used and the samples were rod shaped. For test reasons the velocity field characteristic of Germanium was measured. In the case of GaAs the results are worked out by means of an extension of Marcuvitz's analysis of the impedance of a rod mounted inductively in the wave guide. Experiments were carried out at temperatures between 300K and 450K. A mathematical technique is described by means of which the velocity field characteristic was deduced from the mean values recorded by the experiment. The temperature variation of the velocity field characteristic of GaAs was used to estimate the temperature dependence of Gunn diode efficiency as a function of bias field. The efficiency is substantially higher at lower temperatures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1970
- Accession Number
- AD0722775
Entities
People
- Peter A. Bostock
Organizations
- University of Oxford