Optical Properties of Semiconductors.
Abstract
The program of investigations was designed to lead to a better understanding of the electronic structure and the optical properties of semiconducting materials used in modern solid state electronic circuitry for detection, amplification and communication in aerospace environments. This is essential to the design of optical detectors and devices. The study involved calculations of the high-frequency conductivity and dielectric properties of semiconductors including anisotropic features, taking into account electronic and ionic correlations and fluctuations, effects of magnetic fields, impurities and band structure. The principal technique used was the many-body perturbation method, extended to include valence states, strong electron-phonon and radiation interactions and the effect of local impurity potentials. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1971
- Accession Number
- AD0722865
Entities
People
- Narkis Tzoar
Organizations
- City College of New York