Ion Implantation and Backscattering and Channeling Effect Measurements for Analysis of Semiconductor Structures.
Abstract
There were two broad phases of investigation: ion implantation phenomena and evaluation of semiconductor structures by use of nuclear techniques. Both Hall and Channeling effect measurements were used to evaluate implanted layers. Evaluation of different dopant elements indicated similar behavior among species of the same column of the periodic table but different behavior between adjacent elements. During anneal sequences, enhanced diffusion of the implanted species towards the surface was found. Backscattering and channeling effect measurements were directed toward determination of the depth distribution and lattice location of dopant species and toward evaluation of the composition of dielectric layers on semiconductors. Diffusion and alloying behavior were also investigated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1971
- Accession Number
- AD0723300
Entities
People
- Ian V. Mitchell
- James W. Mayer
- Jozsef Gyulai
- Marc A. Nicolet
- Nils G. E. Johansson
Organizations
- California Institute of Technology