GaAs Junction Field-Effect Transistor Radiation Study.
Abstract
Active and passive GaAs devices, fabricated from epitaxial N-type material in a doping range from 10 to the 16th power to 10 to the 17th power/cu cm, were exposed to a fast neutron fluence (E>10 keV) of 2 x 10 to the 15th power n/sq cm2. The experimental GaAs J-FET's have a nominal channel length of 5 microns, i.e., maximum frequency of oscillation between 4 and 6 GHz. In reasonable accord with predictions experimental GaAs J-FET's with a channel doping concentration of 5 x 10 to the 16th power/cu cm measured a 20% degradation of transconductance and pinch-off voltage when exposed to a fluence of 2 x 10 to the 15th power neutrons/sq cm. Devices with channel doping concentrations of 10 to the 17th power/cu cm are predicted to survive fluences of about 10 to the 16th power neutrons/sq cm. Parasitic device elements are identified and their influence on determination of normalized degradation parameters is discussed. A comparison between Si and GaAs J-FET's of comparable channel doping is presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1971
- Accession Number
- AD0723303
Entities
People
- Allen F. Behle
- Rainer Zuleeg