Effect of Aluminum Doping on the Thermal Stability of 4H- and 6H-SiC,
Abstract
The effect of aluminum doping on the thermal stability of basic SiC polytypes was studied experimentally in the range 2,000-2,400C. The doping was performed by adding alumina to a mixture of powdered silicon and carbon. The relative amount of 4H increased with increasing content of aluminum in the SiC powder. The same aluminum effect was shown when high-purity alpha-SiC was used. The stability of the 4H structure by aluminum doping was attributed to lattice distortion. The 15R-type was found quasi-stable under these conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 17, 1971
- Accession Number
- AD0724102
Entities
People
- Mahito Kumanomido
- Mamoru Mitomo
- Yoshizo Inomata
Organizations
- Emmanuel College