On the Wurtzite-Type SiC Whiskers Obtained by Sublimation and the Thermal Stability of Basic SiC Polytypes,
Abstract
2H-type SiC whiskers were obtained using the sublimation method. From the results of heating a powdered mixture of high-purity silicon and graphite, the thermal stability of basic SiC polytypes was discussed. The condlusions are summarized as follows: Beta-SiC crystals grow in the entire temperature range under conditions of high supersaturation; The initial phase which appears from heating Beta-SiC is mainly 6H above 1,600C and 4H or 2H below 1,400C; 2H, 3C, and 6H are stable in the range below 1,400C, 1,400-1,600C, 1,600-2,100C, and above 2,100C, respectively. 15R is unstable throughout the entire temperature range. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 17, 1971
- Accession Number
- AD0724103
Entities
People
- Yoshizo Inomata
- Zenzaburo Inoue
Organizations
- Emmanuel College