Computer Programs to Evaluate Semiconductor Materials in Conjunction with Schottky Barriers.

Abstract

The report presents two computer programs written in FORTRAN COMPUTER LANGUAGE FOR USE ON REMOTE ACCESS TELETYPE TERMINALS WHICH CAN BE USED TO CALCULATE THE IMPURITY DOPING PROFILES OF SEMICONDUCTOR MATERIALS. These programs are used in conjunction with capacitance-voltage measurements on rectifying Schottky barrier contacts. The basic mathematical equation used in the calculations are derived and the program logic is discussed. One program uses curve fitting techniques to obtain a polynomial which produces a 'best-fit' curve to the data by employing a least squares criterion. The second program is based on differential capacitance voltage measurements to make point-by-point calculations of carrier concentration and depth. The advantages and disadvantages of each technique are discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1971
Accession Number
AD0724106

Entities

People

  • Kenneth L. Klohn

Organizations

  • United States Army Communications-Electronics Command

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Compound Semiconductors
  • Computer Languages
  • Computer Programs
  • Computers
  • Curve Fitting
  • Electronics
  • Equations
  • Impurities
  • Language
  • Materials
  • Mathematics
  • Measurement
  • Polynomials
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Regression Analysis.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics