Electronic and Radiation Damage Properties of Rutile

Abstract

A new mechanism to account for the anomalously large dielectric loss and apparent dielectric constant frequently observed in TiO2 is presented, which appears to agree well with experiment. The mechanism involves field-induced donor migration, resulting in a large decrease in electronic resistivity in part of the crystal. Experimental results on a variety of crystals are discussed, and the influence of electrode materials, surface condition, heat treatment and ambient is analyzed. A method for numerically calculating the resistivity profile of such a crystal from dielectric loss data is described. Results indicative of room temperature p-type conductivity, and a voltage-induced conduction process are presented.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1971
Accession Number
AD0724311

Entities

People

  • Franz Rosenberger
  • John W. Deford
  • Owen W. Johnson

Organizations

  • University of Utah

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Charge Density
  • Chemistry
  • Conduction Bands
  • Conductivity
  • Dielectric Permittivity
  • Electromagnetic Fields
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Heat Treatment
  • Materials
  • Materials Science
  • Measurement
  • Partial Pressure
  • Solid State Physics
  • Surface Properties

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene