Electrical Properties of Zinc- and Tellurium-Doped Single-Crystal Gallium Phosphide,
Abstract
Using the van der Pauw method, Hall and resistivity measurements have been made on Zn- and Te-doped, epitaxially grown, single-crystal GaP. The measurements were made in the temperature range from 4 to 300K in the Zn-doped samples, and from 78 to 300K in the Te-doped samples. Room-temperature carrier concentrations ranged from 7 x 10 to the 15th power to 7 x 10 to the 18th power/cc in Zn-doped GaP and 4 x 10 to the 17th power to 2.7 x 10 to the 18th power/cc in Te-doped GaP. Variations of the ionization energies of Zn and Te with impurity concentration were determined from an analysis of the data. Room-temperature hole mobility in Zn-doped GaP varied from 60 to 100 sq cm/V-sec, and in Te-doped GaP from 11 to 91 sq cm/V-sec. The temperature dependence and magnitude of the mobility for both dopants are in good agreement with the calculated values of mobility due to scattering by acoustical and polar optical phonons at high temperatures. for by the mechanism of charged impurity scattering alone. The resistivity measurements of Zn-doped GaP below 78K show that GaP behaves as impure Ge does in the impurity-band conduction range. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1971
- Accession Number
- AD0724680
Entities
People
- Fernand D. Bedard
- James D. Penar
- Marvin M. Cohen
Organizations
- Harry Diamond Laboratories