Junction Growth Techniques for GaAs Avalanche Transit Time Devices.
Abstract
New techniques of liquid phase epitaxial growth have been employed to prepare GaAs wafers with thin high quality n layers and p(+) layers. Wafers have been produced in p(+)-n-n(+) configurations; with abrupt p(+)-n and abrupt n-n(+) junctions; with p(+) layers 1 to 3 micrometers thick and doping levels as high as 2 x 10 to the 19th power/cc; with n layers of average thickness 3 micrometers, electron concentration in the range 1 to 4 x 10 to the 16th power/cc and mobility greater than 5000 sq cm/V.sec at room temperature. These epitaxial layers have been grown on n(+) substrate wafers with dislocation densities ranging from 500/sq cm to about 100/sq cm, electron concentrations in the range of 1 to 4 x 10 to the 18th power and electron mobilities ranging from 2500 sq cm/V.sec to 2000 sq cm/V.sec. The procedures and apparatus used for preparation of these epitaxial wafers are described in detail. In addition, the evaluation of these epitaxial wafers by techniques of capacitance-voltage profiling, infrared interference fringe measurement and x-ray anomalous diffraction contrast topography is described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1971
- Accession Number
- AD0724705
Entities
People
- James F. Black
- Richard H. Deitch