Use of Electron and Ion Beams in Microelectronics,
Abstract
A review is given of the state of the art in the use of electron and ion beam techniques in forming planar integrated circuits. The advantages of the beam techniques over generally used methods such as chemical or photo etching are discussed. Advantages include: reducing the minimum size of active and passive elements to the order of a micron or less, thus increasing the frequency range to 1-10 GHz and the given packing factor elements; elimination of masks, phototemplates, etc. in circuit manufacture; quicker forming of p-n junctions in semiconductors, with improved control of carrier density; and the general possibilities of contactless control of microcircuits. Diagrams of electron beam, ion beam, and combined electron-ion beam devices are given; an example is shown in a figure. Most of the techniques, and all other hardware cited, are from Western sources. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1971
- Accession Number
- AD0724965
Entities
People
- B. S. Danilin
- G. A. Shteinman
- Yu. V. Zaumysov
Organizations
- National Air and Space Intelligence Center