Growth and Characterization of Tetragonal (Rutile) GeO2 Crystals.
Abstract
The use of germanium in semiconductor devices continues in importance but adequate substrate materials and/or passivating (insulating) films for Ge are still lacking. Although such properties of the tetragonal oxide of germanium as chemical inertness and low electrical conductivity indicate it would be an excellent substrate/passivating material for Ge semiconductor devices, various attempts to prepare this oxide have met with only limited success (Albers, Valyocsik, and Mohan, 1966; Carasso and Faktor, 1965; Wilkes, 1964). This report describes a preparation method for this oxide as well as some previously unreported characteristics of the material. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 12, 1971
- Accession Number
- AD0725056
Entities
People
- John W. Goodrum
Organizations
- Air Force Cambridge Research Laboratories