Electrical Properties of Transition Metal Oxides Up to 1800 C.

Abstract

Properties of atomic defects and of charge carriers in the following materials were determined: MnO, FeO, CoO, and NiO. Most of the measurements were made on undoped material under high temperature equilibrium conditions with the lower limit of temperature being 900C, and the upper limit being 1500C or even 1700C in the case of MnO. The oxygen pressure extended from pure oxygen to 10 to the minus 20th power atm of oxygen. Properties measured or calculated from the measurements were: deviation from stoichiometry, conductivity, thermopower, Hall mobility and drift mobility of electrons and holes, concentrations of ionized and non-ionized defects. Additional results include parts of the phase diagram of the above compounds. For CoO measurements were also made on chemically doped materials. In the case of FeO and CoO the author has made measurements of electrical properties in the vicinity of room temperature and down to liquid air temperature. In NiO the author has measured the photoconductive response in the near infrared, the visible and the ultraviolet. Materials used were single crystals and polycrystals, depending on availability and on the experimental conditions. Single crystals of NiO and FeO were grown in this laboratory by an epitaxial method. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1971
Accession Number
AD0725064

Entities

People

  • D. S. Tannhauser

Organizations

  • Technion – Israel Institute of Technology

Tags

DTIC Thesaurus Topics

  • Air Temperature
  • Charge Carriers
  • Crystals
  • Electrical Properties
  • High Temperature
  • Materials
  • Measurement
  • Metal Oxides
  • Mobility
  • Oxygen
  • Phase Diagrams
  • Single Crystals
  • Transition Metals

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene