A Study of Simultaneous Solid State Diffusion in Fabrication of Integrated Circuits (from Doped Silicafilms).

Abstract

The study explores three areas. The first is the use of doped Silicafilms as diffusion sources. The second is the use of these Silicafilm diffusion sources in simultaneous diffusion of N and P-type regions. The third is the production of complementary insulated gate field effect transistors using Silicafilm diffusion sources in a triple-diffusion process. The doped Silicafilms were shown to be useful diffusion sources. The simultaneous diffusion was not achieved, and the conclusion is that even if simultaneous diffusion is possible using Silicafilm sources, the gain would not be worth the effort. The triple-diffusion process worked well, and the resulting devices are discussed in the last part of the report. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1971
Accession Number
AD0726553

Entities

People

  • Alan A. Ross

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Circuits
  • Diffusion
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Production
  • Semiconductor Devices
  • Solid State Electronics
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Munitions and Ordnance Engineering

Technology Areas

  • Microelectronics