Development of GaAs Infrared Window Material
Abstract
The metallurgical, analytical, electrical and optical properties of semi-insulating GaAs were further investigated. Optimization of the 10.6 micron optical absorption coefficient continued. The measurement equipment involving a CO2 laser was improved so that the homogeneity of samples can be evaluated. Doping experiments in GaSb gave closely-compensated but not high resistivity material--the maximum resistivity observed at room temperature was one ohm-cm. Evaluation of large diameter castings showed the need for a more controlled freezing surface, and plans have been made which will make this feasible.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1971
- Accession Number
- AD0726743
Entities
People
- Alan G. Thompson