Isothermal Annealing of the 0.97 Electron Volt Luminescence in Electron-Irradiated Silicon,

Abstract

Low temperature photoluminescence in pulled Si irradiated with 3 MeV electrons exhibits a prominent zero-phonon line at 0.97 eV which anneals between 200 and 275 degrees C according to previous isochronal data. Isothermal annealing measurements are reported which reveal an activation energy of about 1.34 eV for the annealing of this line. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1971
Accession Number
AD0726916

Entities

People

  • Edward Hung-hay Wong

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Electrons
  • Energy
  • Heat Of Activation
  • Low Temperature
  • Luminescence
  • Measurement
  • Optical Phenomena
  • Photoluminescence

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene