Interface Phenomena in Integrated Circuit Oxides.
Abstract
The instability in MIS devices, arising due to mobile positive ions in the insulator layer was investigated experimentally and theoretically. When ions move from one interface to another of a metal-oxide-silicon structure under the action of an external field at an elevated temperature, the charge induced in the silicon electrode and in the metal electrode changes and a current flows through the external circuit. Measurement of the charge flow indicates that the rate of ion transport is excitation limited rather than diffusion limited as previously assumed by other researchers. An investigation of the luminescence during anodic oxidation of silicon was started. The emitted light is detected by a photomultiplier and spectral curves obtained by use of eighteen interference filters. The effect of charge induced in MOS structures by ionizing radiation is being studied by photoelectric techniques and focus will be on annealing effects. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1971
- Accession Number
- AD0727693
Entities
People
- Cadambanguidi R. Viswanathan
Organizations
- University of California, Los Angeles